npn BUX84 ? bux85 comset semiconductors 1/3 s s i i l l c c o o n n d d i i f f f f u u s s e e d d p p o o w w e e r r t t r r a a n n s s i i s s t t o o r r s s the BUX84-bux85 are npn transistors m ounted in jedec to-220 plastic package. they are designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems. compliance to rohs. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage BUX84 400 v bux85 450 v ce sm collector-emitter voltage (open base) BUX84 800 v bux85 1000 i c collector current i c BUX84 2 a bux85 i cm BUX84 3 a bux85 i b base current BUX84 0.75 a bux85 i bm base current (peak value) BUX84 1 a bux85 -i bm reverse base current (peak value) (1) BUX84 1 a bux85 p d total device dissipation @ t c = 50 BUX84 40 watts bux85 t j junction temperature BUX84 150 c bux85 t stg storage temperature range BUX84 -65 to +150 c bux85 thermal characteristics symbol ratings value unit r thj-a thermal resistance, junction to mounting base 70 k/w r thj-mb thermal resistance, junction to ambient in free air 2.5 k/w
npn BUX84 ? bux85 26/10/2012 comset semiconductors 3/3 electrical characteristics (3) tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i ces collector cutoff current(2) v cem = v cesmax v be =0v BUX84 - - 0.2 ma bux85 v cem = v cesmax v be =0v t j =125 c BUX84 - - 1.5 bux85 i ebo emitter cutoff current v be =5.0 v, i c =0 BUX84 - - 1 ma bux85 v ceosust collector-emitter sustaining voltage i c =100 ma, i boff = 0 l=25mh BUX84 400 - - v bux85 450 - - h fe dc current gain i c =0.1 a, v ce =5 v BUX84 30 50 - - bux85 v ce(sat) collector-emitter saturation voltage i c =0.3 a, i b =30 ma BUX84 - - 0.8 v bux85 i c =1 a, i b =0.2a BUX84 - - 1 bux85 v be(sat) base-emitter saturation voltage i c =1 a, i b =0.2 a BUX84 - - 1.1 bux85 f t transition frequency i c =0.5 a, v ce =10 v f= 1mhz BUX84 4 20 - mhz bux85 t on turn-on time i c =1 a, v cc =250 v i b1 =0.2a, i b2 =0.4a BUX84 - 0.3 0.5 s bux85 t s storage time i c =1 a, v cc =250 v i b1 =0.2a, i b2 =0.4 BUX84 - 2 3.5 bux85 t f fall time i c =1 a, v cc =250 v i b1 =0.2a, i b2 =0.4 BUX84 - 0.4 - bux85 t f fall time i c =1 a, v cc =250 v i b1 =0.2a, i b2 =0.4 t c =95 BUX84 - - 1.4 bux85 (1) turn off current (2) measured with a half-sinewave (curve tracer) (3)puls test : pw =300s, duty cycle< 2%
npn BUX84 ? bux85 26/10/2012 comset semiconductors 3/3 mechanical data case to-220 dimensions (mm) min. max. a 9,90 10,30 b 15,65 15,90 c 13,20 13,40 d 6,45 6,65 e 4,30 4,50 f 2,70 3,15 g 2,60 3,00 h 15,75 17.15 l 1,15 1,40 m 3,50 3,70 n - 1,37 p 0,46 0,55 r 2,50 2,70 s 4,98 5,08 t 2.49 2.54 u 0,70 0,90 revised september 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com pin 1 : base pin 2 : collector pin 3 : emitter case : collector
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